Kyoto, Japan

Kazunori Kijima

This inventor holds 2 USPTO granted patents. Top assignees: Sumitomo Cement Co., Ltd., Kazunori Kijima Kyoto, Other. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazunori Kijima. Retrieved from https://idiyas.com/inventor/kazunori-kijima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 25(Granted Patents)


Location History:

  • Kyoto, JP (1992)
  • Fukakusa, Fushimi-Ku Kyoto-shi, Kyoto, JP (1992)

Company Filing History:


Years Active: 1992

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2 patents (USPTO):Explore Patents

Title: Kazunori Kijima: Innovator in Silicon Carbide Technology

Introduction

Kazunori Kijima is a notable inventor based in Kyoto, Japan. He has made significant contributions to the field of materials science, particularly in the development of silicon carbide technologies. With a total of 2 patents, Kijima's work focuses on enhancing the thermal and electrical properties of silicon carbide bodies.

Latest Patents

Kijima's latest patents include a sintered silicon carbide body with high thermal conductivity. This innovative material boasts a thermal conductivity of not less than 150 W/m·K. Additionally, he has developed a highly pure sintered carbide with high electric conductivity. This electrically conductive sintered silicon carbide body has an electric resistivity of not higher than 1 Ω·cm.

Career Highlights

Throughout his career, Kijima has worked with prominent companies such as Sumitomo Cement Co., Ltd. His experience in these organizations has allowed him to refine his expertise in materials engineering and innovation.

Collaborations

Kijima has collaborated with notable coworkers, including Eiki Arai and Youichi Miyazawa. Their joint efforts have contributed to advancements in silicon carbide technology.

Conclusion

Kazunori Kijima's work in silicon carbide technology exemplifies innovation in materials science. His patents reflect a commitment to enhancing the properties of silicon carbide, paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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