Kyoto, Japan

Kazuki Kawasaki

This inventor holds 1 USPTO granted patent. Top assignee: Rohm Co., Ltd.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuki Kawasaki. Retrieved from https://idiyas.com/inventor/kazuki-kawasaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2023

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Kazuki Kawasaki: Innovator in Semiconductor Technology

Introduction

Kazuki Kawasaki is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, showcasing his innovative spirit through his patented inventions.

Latest Patents

Kawasaki holds a patent for a semiconductor device that aims to reduce wiring resistance by utilizing a stripe wire. This device features a source pad electrode formed on a second interlayer insulating layer, along with multiple source extraction electrodes extending from the source pad electrode. Additionally, it includes a drain pad electrode and several drain extraction electrodes, all designed to enhance the efficiency of semiconductor devices.

Career Highlights

Kawasaki's career is marked by his dedication to advancing semiconductor technology. His work has led to the development of devices that improve performance and reliability in electronic applications. He is currently associated with Rohm Co., Ltd., a company known for its innovative electronic components.

Collaborations

Kawasaki has collaborated with notable colleagues, including Yuki Inoue and Yusuke Yoshii. Their combined expertise has contributed to the successful development of advanced semiconductor technologies.

Conclusion

Kazuki Kawasaki's contributions to semiconductor technology exemplify his innovative mindset and commitment to excellence. His patent for a semiconductor device reflects his ability to address critical challenges in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…