Tokyo, Japan

Kazuhiro Onishi



 

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 17(Granted Patents)


Location History:

  • Kurashiki, JP (2009 - 2010)
  • Tokyo, JP (2013)

Company Filing History:


Years Active: 2009-2013

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5 patents (USPTO):Explore Patents

Title: Kazuhiro Onishi: Innovator in Semiconductor Technology

Introduction

Kazuhiro Onishi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Kazuhiro Onishi's latest patents is a semiconductor device and method of manufacturing the same. This invention aims to provide a semiconductor device capable of suppressing the reduction of drive current in a Metal-Insulator-Semiconductor (MIS) transistor when multiple transistors with different absolute values of threshold voltage are used. The design includes a second nMIS transistor with a greater threshold voltage than a first nMIS transistor, ensuring that the concentration of lanthanum and magnesium atoms in the high-k film of the second transistor is lower than that in the first. This innovative approach addresses critical challenges in semiconductor manufacturing.

Career Highlights

Throughout his career, Kazuhiro Onishi has worked with notable companies such as Asahi Kasei Chemicals Corporation and Renesas Electronics Corporation. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Kazuhiro Onishi has collaborated with esteemed colleagues, including Nobuhisa Miyake and Kazuhiro Tsukamoto. These partnerships have contributed to the advancement of his research and innovations in the semiconductor field.

Conclusion

Kazuhiro Onishi's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of efficient semiconductor devices.

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