Company Filing History:
Years Active: 2022-2025
Title: Kazuhiko Ohhashi: Innovator in Radio-Frequency Power Amplification
Introduction
Kazuhiko Ohhashi is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of radio-frequency technology, holding three patents that showcase his innovative spirit and technical expertise.
Latest Patents
His latest patents include a high-frequency power amplification device. This device features a carrier amplifier semiconductor device and a peak amplifier semiconductor device mounted on a multilayer submount substrate. It also incorporates a bias power supply semiconductor device and second radio-frequency signal wiring that transmits radio-frequency signals to the carrier amplifier and peak amplifier semiconductor devices. The design includes carrier-amplifier bias power supply wiring, which is arranged in a third wiring layer to supply a bias power supply voltage. Notably, the second radio-frequency signal wiring and the carrier-amplifier bias power supply wiring intersect in a plan view. Additionally, the radio-frequency power amplifier device is equipped with a shield pattern located in a second wiring layer between the first and third wiring layers, along with one or more connection vias that connect to the shield pattern.
Career Highlights
Kazuhiko Ohhashi is currently employed at Nuvoton Technology Corporation Japan, where he continues to develop cutting-edge technologies in the field of radio-frequency amplification. His work has been instrumental in advancing the capabilities of power amplification devices.
Collaborations
He has collaborated with notable colleagues, including Masatoshi Kamitani and Kouki Yamamoto, contributing to a dynamic and innovative work environment.
Conclusion
Kazuhiko Ohhashi's contributions to radio-frequency technology through his patents and work at Nuvoton Technology Corporation Japan highlight his role as a key innovator in the field. His advancements in power amplification devices are paving the way for future developments in technology.
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