Kay M Locke

Title: Kay M Locke: Innovator in Shallow Junction MOS Circuits

Introduction

Kay M Locke is a notable inventor based in Northampton, PA (US). She has made significant contributions to the field of integrated circuits, particularly in the development of structures for shallow junction MOS circuits. Her innovative work has led to advancements in semiconductor technology.

Latest Patents

Kay M Locke holds 1 patent for her invention titled "Structure for Shallow Junction MOS Circuits." This patent describes a contact structure and method of fabrication aimed at achieving shallow junction MOS integrated circuits. The invention involves depositing an insulator, such as phosphosilicate glass, over the circuit and opening contact windows. By eliminating fire polishing of the glass, the junctions can be made shallow while maintaining steep sides of the windows. A layer of polycrystalline silicon is then deposited to conformally coat the sides of the windows and the exposed semiconductor. Finally, a contact metal, such as aluminum, is deposited over the polycrystalline silicon, ensuring adequate conduction despite the discontinuity over the steep sides of the windows.

Career Highlights

Kay M Locke has had a distinguished career at Bell Telephone Laboratories, where she has been instrumental in advancing semiconductor technologies. Her work has not only contributed to her own patent but has also influenced the broader field of integrated circuits.

Collaborations

Kay has collaborated with notable colleagues, including James T Clemens, to further enhance the development of innovative technologies in their field.

Conclusion

Kay M Locke's contributions to shallow junction MOS circuits exemplify her innovative spirit and dedication to advancing technology. Her work continues to impact the semiconductor industry positively.