Katuo Ishizaka

Title: Katuo Ishizaka: Innovator in Semiconductor Technology

Introduction

Katuo Ishizaka is a prominent inventor based in Shinto, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of vertical power MOSFETs. With a total of 2 patents to his name, Ishizaka's work has had a notable impact on the efficiency and performance of semiconductor devices.

Latest Patents

Ishizaka's latest patents focus on diminishing the ON resistance and leakage current of vertical power MOSFETs. His innovative designs involve a vertical high breakdown voltage MOSFET with unit MOSFETs arranged both longitudinally and transversely over the main surface of a semiconductor substrate. The cells are quadrangular in shape, and each cell contains source regions whose inner end portions are exposed to a quadrangular source contact hole. The source regions are trapezoidal, with the lower side positioned below a gate electrode, while the upper side is exposed to the source contact hole. This design effectively separates the four source regions by diagonal regions of the quadrangle, enhancing the overall performance of the device.

Career Highlights

Katuo Ishizaka is associated with Renesas Technology Corporation, where he continues to innovate in the semiconductor field. His work has been instrumental in advancing the technology used in power MOSFETs, contributing to more efficient electronic devices.

Collaborations

Ishizaka has collaborated with Tetsuo Iijima, another notable figure in the semiconductor industry. Their partnership has fostered advancements in semiconductor technology, further enhancing the capabilities of their inventions.

Conclusion

Katuo Ishizaka's contributions to semiconductor technology, particularly through his innovative patents, have established him as a key figure in the industry. His work continues to influence the development of more efficient electronic devices, showcasing the importance of innovation in technology.