Katsuyuki Sato

Title: Innovations of Katsuyuki Sato in Low-Power SRAM Technology

Introduction

Katsuyuki Sato is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of low-power static random access memory (SRAM) technology. With a total of four patents to his name, Sato has made remarkable advancements that enhance the efficiency and performance of memory systems.

Latest Patents

Sato's latest patents focus on innovative designs for low-power SRAM. One of his notable inventions is a low-power static random access memory that incorporates a cache memory function without the need for a special bit cell. This design achieves robust read and write operations without requiring a write assist circuit at 16 nm or below FinFET technology. The SRAM features a half-Vdd precharge 6 T SRAM cell array, which ensures reliable operation at low supply voltages. Additionally, it utilizes a cacheable dynamic flip-flop based differential amplifier, referred to as a main amplifier, which serves multiple functions including that of a read amplifier, write amplifier, and cache memory.

Another patent by Sato describes a static random-access memory that includes a word line circuit for generating a word line signal. This design features a plurality of six-transistor memory cells arranged between two bitlines, allowing for simultaneous selection of memory cells for data reading or writing. Each memory cell is equipped with n-channel transistors and a bitline precharge circuit, which precharges the bitlines to a voltage of Vdd/2 prior to receiving the word line signal.

Career Highlights

Katsuyuki Sato has established himself as a leading figure in the field of memory technology. His work at Untether Ai Corporation has been instrumental in pushing the boundaries of low-power memory solutions. His innovative designs have garnered attention and recognition within the industry.

Collaborations

Sato has collaborated with notable colleagues, including William Martin Snelgrove and Saijagan Saijagan, contributing to the advancement of memory technology through shared expertise and innovative ideas.

Conclusion

Katsuyuki Sato's contributions to low-power SRAM technology exemplify his commitment to innovation in the field of memory systems. His patents reflect a deep understanding of the challenges in memory design and a dedication to creating efficient solutions. Sato's work continues to influence the future of memory technology.