Yamanashi, Japan

Katsuyuki Higashi

This inventor holds 2 USPTO granted patents. Top assignee: Tokyo Electron Limited. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsuyuki Higashi. Retrieved from https://idiyas.com/inventor/katsuyuki-higashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Innovations by Katsuyuki Higashi

Introduction

Katsuyuki Higashi is a notable inventor based in Yamanashi, Japan. He has made significant contributions to the field of gas management and substrate processing systems. His innovative approach has led to the development of a unique gas management method that enhances processing efficiency.

Latest Patents

Higashi holds a patent for a gas management method and substrate processing system. This method involves heating a raw material container to generate a vaporized raw material gas. The vaporized gas is then supplied along with a carrier gas to a processing container that accommodates a substrate. The heater is controlled based on the weight of the substrate after processing, ensuring optimal performance. He has 1 patent to his name.

Career Highlights

Katsuyuki Higashi is currently employed at Tokyo Electron Limited, a leading company in the semiconductor and electronics manufacturing industry. His work focuses on improving gas management techniques, which are crucial for substrate processing.

Collaborations

Higashi collaborates with talented coworkers, including Koji Sasaki and Yuji Seshimo. Their combined expertise contributes to the advancement of innovative technologies in their field.

Conclusion

Katsuyuki Higashi's contributions to gas management methods and substrate processing systems highlight his role as an influential inventor. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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