Ome, Japan

Katsuyuki Asaka


Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 39(Granted Patents)


Company Filing History:


Years Active: 2001-2006

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5 patents (USPTO):Explore Patents

Title: Katsuyuki Asaka: Innovator in Semiconductor Manufacturing

Introduction

Katsuyuki Asaka is a prominent inventor based in Ome, Japan. He has made significant contributions to the field of semiconductor manufacturing, holding a total of 5 patents. His work focuses on improving the reliability and efficiency of semiconductor integrated circuit devices.

Latest Patents

One of Asaka's latest patents is a method for manufacturing semiconductor integrated circuit devices. This method aims to prevent breakage and separation of wiring in devices such as the bit-line of a DRAM. The process involves depositing a high-density plasma silicon oxide film on wirings using a high-density plasma CVD technique at a first temperature. The structure is then subjected to rapid thermal annealing (RTA) at a second temperature, which is higher than the first. Via holes are formed in the silicon oxide film, and conductive films are created, ensuring that the first conductive film is formed at a lower temperature. This innovative approach reduces film stress and prevents breakage of the bit-line during heat treatment.

Career Highlights

Throughout his career, Katsuyuki Asaka has worked with notable companies, including Hitachi, Ltd. His experience in the semiconductor industry has allowed him to develop advanced manufacturing techniques that enhance device performance and reliability.

Collaborations

Asaka has collaborated with esteemed colleagues such as Makoto Yoshida and Toshihiko Takakura. Their combined expertise has contributed to the advancement of semiconductor technologies.

Conclusion

Katsuyuki Asaka's innovative methods in semiconductor manufacturing have made a significant impact on the industry. His dedication to improving device reliability continues to influence the field of integrated circuits.

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