Katsuyoshi Anzai

Title: Innovations by Katsuyoshi Anzai

Introduction

Katsuyoshi Anzai is a notable inventor based in Oizumi-machi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the performance and reliability of semiconductor devices.

Latest Patents

Anzai's latest patents include a semiconductor device having a drain/source surrounded by an impurity layer and a manufacturing method thereof. This invention presents a transistor structure that enhances electrostatic discharge (ESD) withstand voltages. A high impurity concentration drain layer is strategically formed on the surface of an intermediate impurity concentration drain layer, positioned away from the drain-side end of the gate electrode. Additionally, a P-type impurity layer is created in the substrate surface between the gate electrode and the high impurity concentration drain layer, effectively surrounding it. This design allows electrons to travel from the source electrode to the drain electrode in a manner that avoids the vicinity of the substrate surface, thus improving the device's resilience against surges.

Another significant patent by Anzai is the manufacturing method of a semiconductor device with enhanced protection against electrostatic discharge. This innovation improves the withstand voltage of high voltage MOS transistors. In this design, an N-type drain layer is not formed beneath the N-type drain layer, while a P-type buried layer is established in the region below it. A high impurity concentration PN junction is formed between these layers, creating a localized area with low junction breakdown voltage. This configuration allows surge current to flow through the PN junction into the silicon substrate, preventing thermal damage to the N-type drain layer below the gate electrode and thereby enhancing ESD withstand voltage.

Career Highlights

Throughout his career, Katsuyoshi Anzai has worked with prominent companies in the semiconductor industry, including Sanyo Electric Co., Ltd. and Semiconductor Components Industries, LLC. His experience in these organizations has contributed to his expertise in semiconductor device innovation.

Collaborations

Anzai has collaborated with notable colleagues such as Masafumi Uehara and Shuichi Kikuchi. Their joint efforts have further advanced the field of semiconductor technology.

Conclusion

Katsuyoshi Anzai's contributions to semiconductor technology through his innovative patents demonstrate his significant impact on the industry. His work continues to influence the development of more