Katsuya Fukae

Title: Katsuya Fukae: Innovator in Dry Etching Technology

Introduction

Katsuya Fukae is a notable inventor based in Shibukawa, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly in dry etching methods. With a total of 5 patents to his name, Fukae's work has advanced the efficiency and effectiveness of film processing techniques.

Latest Patents

Fukae's latest patents focus on a dry etching method and a dry cleaning method. These innovations provide a way to selectively etch films primarily containing silicon, such as polycrystalline silicon, single crystal silicon, or amorphous silicon. The methods also include a cleaning process that removes silicon-based deposits from the interior of film-forming apparatuses, such as chemical vapor deposition (CVD) systems, without causing damage. By introducing a monofluoro interhalogen gas and nitric oxide into the apparatus, followed by thermal excitation, Fukae's methods allow for rapid and selective etching while minimizing the etching rate of silicon nitride and silicon oxide.

Career Highlights

Throughout his career, Katsuya Fukae has worked with Kanto Denka Kogyo Co., Ltd., where he has honed his expertise in semiconductor technologies. His innovative approaches have positioned him as a key figure in the development of advanced etching techniques.

Collaborations

Fukae has collaborated with notable colleagues, including Yoshinao Takahashi and Korehito Kato. Their combined efforts have contributed to the advancement of semiconductor manufacturing processes.

Conclusion

Katsuya Fukae's contributions to dry etching technology have significantly impacted the semiconductor industry. His innovative methods continue to enhance the efficiency of film processing, showcasing his importance as an inventor in this field.