Katsutoshi Toyama

Title: Katsutoshi Toyama: Innovator in Semiconductor Technology

Introduction

Katsutoshi Toyama is a notable inventor based in Urazoe, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Schottky barrier diodes. His innovative work has led to advancements that enhance the performance and reliability of electronic devices.

Latest Patents

Katsutoshi Toyama holds a patent for a Schottky barrier diode having a mesa structure. This invention focuses on suppressing the concentration of an electrical field at the edge of an insulation layer, which improves the reverse breakdown voltage. The design features an n-layer of a compound semiconductor substrate configured in the form of a mesa, with an insulation layer formed on specific portions of the mesa. The arrangement of the anode and cathode further optimizes the electrical field distribution, enhancing the diode's performance.

Career Highlights

Katsutoshi Toyama is currently employed at Murata Manufacturing Co., Ltd., a leading company in the electronics industry. His work at Murata has allowed him to collaborate with other talented engineers and researchers, contributing to the company's reputation for innovation and quality in electronic components.

Collaborations

Some of his notable coworkers include Tomoyasu Miyata and Koichi Sakamoto. Their collaborative efforts have played a crucial role in advancing semiconductor technologies and improving product offerings at Murata.

Conclusion

Katsutoshi Toyama's contributions to semiconductor technology, particularly through his patented innovations, have made a significant impact in the field. His work continues to influence the development of more efficient electronic devices.