The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1997
Filed:
Dec. 31, 1996
Tomoyasu Miyata, Shiga-ken, JP;
Koichi Sakamoto, Otsu, JP;
Katsutoshi Toyama, Urazoe, JP;
Masaaki Sueyoshi, Shiga-ken, JP;
Abstract
In a Schottky barrier diode, concentration of an electrical field at an edge of an insulation layer is suppressed to improve the reverse breakdown voltage. An n- layer of a compound semiconductor substrate having an n+ layer and the n- layer is configured in the form of a mesa. An insulation layer is formed on at least a skirt portion and a slant portion of the mesa. An anode is formed on the insulation layer and n- layer, and a cathode is formed on the n+ layer. Thus, concentration of an electrical field at an edge of the insulation layer is canceled at least in part by an electrical field generated at the anode on the slant portion to improve the reverse breakdown voltage.