Company Filing History:
Years Active: 1980
Title: Katsutoshi Izumi: Innovator in Semiconductor Technology
Introduction
Katsutoshi Izumi is a notable inventor based in Seki, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.
Latest Patents
Katsutoshi Izumi holds a patent for a semiconductor device having a buried insulating layer. This invention involves a semiconductor manufacturing method and device that utilizes an ion implantation process to form an insulating SiO₂ film on both surfaces of a silicon substrate. The process creates a buried SiO₂ layer within the substrate at a predetermined depth beneath one of the substrate surfaces. This design isolates a body of the substrate layer lying above the buried layer and allows for the formation of a semiconductive device in the isolated body. The surface layers of SiO₂ serve to mechanically balance the internal strains generated within the substrate during the formation of the buried layer, thereby preventing the creation of mechanical imperfections in the surface portions of the substrate.
Career Highlights
Katsutoshi Izumi is associated with Nippon Telegraph and Telephone Public Corporation, where he has been able to apply his expertise in semiconductor technology. His work has contributed to advancements in the manufacturing processes of semiconductor devices.
Collaborations
He has collaborated with notable coworkers such as Masanobu Doken and Hisashi Ariyoshi, further enhancing the innovative environment in which he works.
Conclusion
Katsutoshi Izumi's contributions to semiconductor technology through his patent demonstrate his commitment to innovation in the field. His work continues to influence the development of advanced semiconductor devices.