The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1980
Filed:
Mar. 02, 1978
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 49 ; 357 23 ; 357 34 ; 357 56 ; 357 91 ; 29571 ;
Abstract
A semiconductor manufacturing method and device made therefrom by forming an insulating SiO.sub.2 film on both surfaces of a silicon substrate using an ion implantation process to form a buried SiO.sub.2 layer within the substrate a predetermined depth beneath one of the substrate surfaces, isolating a body of the substrate layer lying above the buried layer, and forming a semiconductive device in the isolated body. The surface layers of SiO.sub.2 serve to mechanically balance the internal strains generated within the substrate during the formation of the buried layer and thereby prevent the creation of mechanical imperfections in the surface portions of the substrate.