Katsumi Tsuneno

Title: Innovations by Katsumi Tsuneno in Semiconductor Manufacturing

Introduction

Katsumi Tsuneno is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative methods. His work has led to advancements that enhance the efficiency and performance of semiconductor devices.

Latest Patents

Katsumi Tsuneno holds a patent for a method of manufacturing an improved silicon-on-insulator (SOI) semiconductor device. This patent outlines a process that involves preparing a first semiconductor substrate with an insulating film, forming a semiconductor film of n-type conductivity, and bonding it with a second semiconductor substrate. The method ultimately provides a semiconductor layer that is crucial for the formation of a gate insulating film and gate electrode for a metal-insulator-semiconductor field-effect transistor (MISFET).

Career Highlights

Throughout his career, Katsumi Tsuneno has focused on developing innovative techniques that improve semiconductor fabrication processes. His patent reflects his expertise and commitment to advancing technology in this critical area.

Collaborations

Katsumi has worked alongside talented colleagues, including Hiroo Masuda and Hisako Sato. Their collaborative efforts have contributed to the success of various projects in the semiconductor industry.

Conclusion

Katsumi Tsuneno's contributions to semiconductor manufacturing through his innovative patent demonstrate his significant role in the field. His work continues to influence advancements in technology and semiconductor device performance.