Katsumi Murase

Title: Innovations of Katsumi Murase

Introduction

Katsumi Murase is a notable inventor based in Iruma, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on advancements that enhance the functionality and efficiency of electronic devices.

Latest Patents

Murase's latest patents include an innovative electrode and semiconductor device. This device features a semiconductor layer formed on a silicon substrate, utilizing poly-crystalline or amorphous multicomponent materials. These materials contain silicon and at least one element from Group IV, such as germanium or tin, along with donor or acceptor impurities. Another significant patent involves a method for manufacturing an insulating film and an electric device. This process entails oxidizing an amorphous silicon layer that contains boron or a combination of boron and germanium. The method allows for the formation of an insulating film while retaining a conductive layer, which is crucial for fabricating bipolar transistors.

Career Highlights

Katsumi Murase is currently employed at Nippon Telegraph and Telephone Public Corporation. His work at this esteemed organization has allowed him to explore and develop cutting-edge technologies in the semiconductor industry. His contributions have been instrumental in advancing the capabilities of electronic devices.

Collaborations

Murase has collaborated with notable colleagues, including Yoshihiko Mizushima and Teruo Tamama. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Katsumi Murase's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence the development of advanced electronic devices.