The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1985
Filed:
Jul. 03, 1984
Applicant:
Inventors:
Katsumi Murase, Iruma, JP;
Yoshihiko Mizushima, Tokyo, JP;
Assignee:
Nippon Telegraph & Telephone Public Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-2 ; 357 67 ; 357 65 ; 357 59 ; 357 15 ; 357 63 ;
Abstract
A semiconductor layer is formed on at least one portion of a silicon substrate. The layer is made of poly-crystalline or amorphous multicomponent containing silicon, at least one element of Group IV having an atomic radius larger than that of silicon, such as germanium or tin, and donor impurity or acceptor impurity.