Kathryn M Francis

Title: Kathryn M. Francis: Innovator in Semiconductor Technology

Introduction

Kathryn M. Francis is a prominent inventor based in Rio Rancho, NM (US). She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative spirit and technical expertise.

Latest Patents

One of her latest patents is a die singulation method. This method is designed for singulating die from a semiconductor substrate, which may include a semiconductor-on-insulator substrate or a bulk silicon substrate. The process involves etching trenches through the substrate and semiconductor layers surrounding the die being singulated. The trenches are strategically offset to ensure that the oxide layer between them holds the substrate and die together. Anisotropic etching is performed using a Deep Reactive Ion Etching (DRIE) process. Once the trenches are etched, the oxide layer between them can be removed with an HF etchant to successfully singulate the die. A release fixture is positioned near one side of the substrate to receive the singulated die.

Career Highlights

Kathryn is currently employed at Sandia Corporation, where she continues to push the boundaries of semiconductor research and development. Her work has been instrumental in advancing technologies that are critical to various applications in the industry.

Collaborations

Some of her notable coworkers include Thomas P. Swiler and Ernest J. Garcia, who have collaborated with her on various projects within the company.

Conclusion

Kathryn M. Francis exemplifies the innovative spirit in the semiconductor industry through her groundbreaking work and patents. Her contributions continue to influence the field and inspire future advancements.