Company Filing History:
Years Active: 2012
Title: Kathrin Rueschenschmidt: A Trailblazer in Semiconductor Technology
Introduction
Kathrin Rueschenschmidt is an accomplished inventor based in Villach, Austria. With a focus on semiconductor technology, she has made significant contributions through her innovative work in the field. Kathrin holds one patent that showcases her expertise and creativity in advancing semiconductor devices for modern technology.
Latest Patents
Kathrin's patent, titled "SiC Semiconductor Device with Self-Aligned Contacts, Integrated Circuit and Manufacturing Method," reflects a groundbreaking approach to semiconductor design. This patent emphasizes a semiconductor device with self-aligned contacts and an integrated circuit, which enhances manufacturing efficiency. One notable embodiment includes gate control structures specifically designed to regulate the conductivity of a channel region within a silicon carbide substrate using field effect. The design feature of self-aligned contact holes along the opposing sidewalls of adjacent gate control structures, achieved by intermediate spacers, demonstrates Kathrin’s innovative thinking and technical prowess.
Career Highlights
Kathrin is proud to be associated with Infineon Technologies Austria AG, where she plays an integral role in pushing the boundaries of semiconductor technology. Her work at Infineon has been marked by a commitment to innovation and excellence, contributing to the company's reputation as a leader in the semiconductor industry.
Collaborations
Kathrin collaborates with talented professionals in her field, including her coworkers Michael Treu and Oliver Haeberlen. These collaborations enhance the development of advanced technologies and foster an environment of creativity and shared expertise at Infineon.
Conclusion
Kathrin Rueschenschmidt exemplifies the spirit of innovation in the semiconductor industry. Through her groundbreaking patent and collaborative efforts at Infineon Technologies Austria AG, she continues to shape the future of technology. Her contributions not only advance the field of semiconductors but also inspire future generations of inventors and innovators.