Company Filing History:
1 out of 832,880 Years Active: 2019
Title: Karl-Magnus Persson: Innovator in Vertical Nanowire MOSFETs
Introduction
Karl-Magnus Persson is a notable inventor based in Lund, Sweden. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of vertical nanowire MOSFETs. His innovative approach has led to advancements in the efficiency and performance of these devices.
Latest Patents
Karl-Magnus Persson holds a patent for a "Method for vertical gate-last process." This method involves the fabrication of vertical nanowire MOSFETs using a gate-last process. The process begins with the fabrication of the top ohmic electrode, which can serve as a mask for creating a gate recess through etching techniques. This innovative approach allows for a substantial reduction in access resistance, enhancing the overall performance of the devices.
Career Highlights
Throughout his career, Karl-Magnus has worked with various companies, including C2amps AB. His expertise in semiconductor technology has positioned him as a key figure in the development of advanced fabrication techniques.
Collaborations
Karl-Magnus has collaborated with notable colleagues such as Lars-Erik Wernersson and Johannes Svensson. Their combined efforts have contributed to the advancement of semiconductor technologies and innovations.
Conclusion
Karl-Magnus Persson's work in the field of vertical nanowire MOSFETs exemplifies the impact of innovative thinking in technology. His contributions continue to influence the semiconductor industry and pave the way for future advancements.