Munich, Germany

Karl-Henrik Rydén

This inventor holds 3 USPTO granted patents. Top assignee: Infineon Technologies Ag. Active years: 2010-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Karl-Henrik Rydén. Retrieved from https://idiyas.com/inventor/karl-henrik-rydén

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2010-2012

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3 patents (USPTO):Explore Patents

Title: Innovations of Karl-Henrik Rydén

Introduction

Karl-Henrik Rydén is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of three patents. His work focuses on enhancing the testing and manufacturing processes of semiconductor devices.

Latest Patents

Rydén's latest patents include a system for testing dielectric films and layers. This innovative method involves a conductor that overlays a dielectric layer. The conductor is connected to a first test pad through a first conducting line and to a second test pad via a second conducting line. This approach aims to improve the efficiency and accuracy of semiconductor device testing.

Career Highlights

Karl-Henrik Rydén is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His expertise in the field has allowed him to contribute to various projects that advance technology in this sector.

Collaborations

Rydén has worked alongside talented colleagues such as Andreas Martin and Andrea Mitchell. Their collaborative efforts have furthered the development of innovative solutions in semiconductor technology.

Conclusion

Karl-Henrik Rydén's contributions to the semiconductor industry through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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