Freiburg, Germany

Karin Maier, Deceased

This inventor holds 1 USPTO granted patent. Top assignee: Daimler-Benz Ag. Active years: 1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Karin Maier, Deceased. Retrieved from https://idiyas.com/inventor/karin-maier-deceased

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Karin Maier

Introduction

Karin Maier was a remarkable inventor known for her significant contributions to the field of materials science. She was particularly recognized for her work in the production of high-resistance silicon carbide. Her innovative spirit and dedication to her craft left a lasting impact on the industry.

Latest Patents

Karin Maier held a patent for a "Process for producing high-resistance silicon carbide." This invention showcases her expertise in developing advanced materials that are crucial for various applications in electronics and engineering. Her patent reflects her commitment to pushing the boundaries of technology.

Career Highlights

Throughout her career, Karin Maier worked at Daimler-Benz AG, where she applied her knowledge and skills to advance the company's technological capabilities. Her work contributed to the development of high-performance materials that are essential in automotive and aerospace industries.

Collaborations

Karin collaborated with notable colleagues, including Ekkehard Niemann and Juergen Schneider. These partnerships allowed her to exchange ideas and enhance her research, leading to innovative solutions in her field.

Conclusion

Karin Maier's legacy as an inventor is marked by her groundbreaking work in materials science and her patent for high-resistance silicon carbide. Her contributions continue to inspire future generations of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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