Karel Bartos

Title: Karel Bartos: Innovator in Crystal Growth Technology

Introduction

Karel Bartos is a notable inventor based in Turnov, Czech Republic. He has made significant contributions to the field of crystal growth technology, particularly in the preparation of doped garnet structure single crystals. His innovative methods have implications for various applications in materials science.

Latest Patents

Karel Bartos holds a patent for a method titled "Method for the preparation of doped garnet structure single crystals with diameters of up to 500 mm." This patent describes a process for preparing lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements. The method involves creating an oxide mixture sinter that is melted and homogenized for at least one hour. The crystal growth rate and broadening of the crystal cone are maintained uniformly at an angle of at least 60° from the crystal axis, achieving a diameter of at least 80% of the crucible diameter, which is a minimum of 100 mm. The process concludes with the separation of the crystal from the melt while it remains positioned in the crucible, allowing for final tempering.

Career Highlights

Throughout his career, Karel Bartos has worked with several prominent companies, including Crytur, Spol. S.r.o. and the Physical Institute of the Czech Academy of Sciences. His work has been instrumental in advancing the techniques used in crystal growth and material preparation.

Collaborations

Karel Bartos has collaborated with notable colleagues such as Jindrich Houzvicka and Karel Blazek. These partnerships have contributed to the development of innovative solutions in the field of crystal technology.

Conclusion

Karel Bartos is a distinguished inventor whose work in crystal growth technology has paved the way for advancements in materials science. His patented methods and collaborations highlight his commitment to innovation and excellence in his field.