Kanagawa, Japan

Kaori Noda


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Kaori Noda: Innovator in Semiconductor Technology

Introduction

Kaori Noda is a prominent inventor based in Kanagawa, Japan. She has made significant contributions to the field of semiconductor technology, particularly in improving device performance and reliability. Her innovative work has led to the development of a patented semiconductor device that addresses critical challenges in the industry.

Latest Patents

Kaori Noda holds a patent for a semiconductor device and method for manufacturing the same. This invention focuses on achieving improved SIV resistance and enhanced EM resistance in coupling structures that contain copper films. The semiconductor device includes a semiconductor substrate, a second insulating layer, a second barrier metal film, and an electrically conducting film that contains copper and carbon. Notably, the distribution of carbon concentration along the depositing direction in the conducting film features both a first peak and a second peak. This innovation represents a significant advancement in semiconductor manufacturing.

Career Highlights

Throughout her career, Kaori Noda has been associated with NEC Electronics Corporation, where she has played a vital role in research and development. Her expertise in semiconductor technology has positioned her as a key contributor to the company's innovative projects. With a focus on enhancing device performance, she has been instrumental in driving advancements in the field.

Collaborations

Kaori Noda has collaborated with notable colleagues, including Akira Furuya and Koji Arita. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor industry.

Conclusion

Kaori Noda's contributions to semiconductor technology exemplify her dedication to innovation and excellence. Her patented work not only addresses critical industry challenges but also paves the way for future advancements in semiconductor devices.

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