The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Feb. 12, 2007
Akira Furuya, Kanagawa, JP;
Koji Arita, Kanagawa, JP;
Tetsuya Kurokawa, Kanagawa, JP;
Kaori Noda, Kanagawa, JP;
Akira Furuya, Kanagawa, JP;
Koji Arita, Kanagawa, JP;
Tetsuya Kurokawa, Kanagawa, JP;
Kaori Noda, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.