Amagi, Japan

Kanjou Ishibashi

This inventor holds 1 USPTO granted patent. Top assignee: Rohm Co., Ltd.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kanjou Ishibashi. Retrieved from https://idiyas.com/inventor/kanjou-ishibashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Kanjou Ishibashi: Innovator in Thermal Printhead Technology

Introduction

Kanjou Ishibashi is a notable inventor based in Amagi, Japan. He has made significant contributions to the field of thermal printing technology. His innovative work has led to the development of a unique thermal printhead design.

Latest Patents

Ishibashi holds a patent for a "Thermal printhead with a resistor layer and method for manufacturing same." This invention features a thermal printhead that includes an insulating substrate, a common electrode with multiple comb teeth, individual electrodes, and a resistor layer. The resistor layer is designed as a thin film, while the common and individual electrodes are made as thick films. This design enhances the efficiency and functionality of thermal printing devices.

Career Highlights

Throughout his career, Kanjou Ishibashi has been associated with Rohm Co., Ltd., a company known for its advancements in semiconductor technology. His work has contributed to the company's reputation for innovation in the electronics sector.

Collaborations

Ishibashi has collaborated with notable colleagues, including Shinobu Obata and Tadashi Yamamoto. Their combined expertise has furthered advancements in thermal printing technology.

Conclusion

Kanjou Ishibashi's contributions to thermal printhead technology exemplify his innovative spirit and dedication to advancing the field. His patent and collaborations highlight the importance of teamwork in achieving technological breakthroughs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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