Suwon, South Korea

Kangin Shin

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kangin Shin. Retrieved from https://idiyas.com/inventor/kangin-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Kangin Shin: Memory Device Innovation

Introduction

Kangin Shin is an inventor based in Suwon, South Korea, and is associated with Samsung Electronics. His work includes a patent focused on improving threshold-voltage distribution in memory devices and refining their data-writing operation.

Latest Patents

Shin is named on 1 patent: “Memory Device with Improved Threshold Voltage Distribution and Operating Method Thereof.” The invention describes a memory cell array, a voltage generator, and control logic that manages multiple programming loops. During at least one loop, the control logic verifies cells intended for a higher program state using a verification condition associated with the preceding state. This approach is designed to improve threshold-voltage distribution during data writing.

Career Highlights

Shin’s listed patent work concerns memory-device programming and verification, areas relevant to the reliability and operation of electronic memory. The provided information associates him with Samsung Electronics.

Collaborations

The listed coworkers associated with Shin are Joonam Kim and Sejun Park. The patent information provided identifies the invention’s technical approach but does not specify the individual contributions of each collaborator.

Conclusion

Kangin Shin’s patent reflects work on improving memory programming through coordinated program loops and verification conditions, contributing to the development of memory-device technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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