Itami, Japan

Kanamf Otaki


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Kanamf Otaki: Innovator in Semiconductor Technology

Introduction

Kanamf Otaki is a notable inventor based in Itami, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique method for producing semiconductor devices.

Latest Patents

Kanamf Otaki holds 1 patent for his invention titled "Method of producing a semiconductor device having a disordered superlattice." This method involves creating a semiconductor device, such as a semiconductor laser, with a controllably disordered superlattice. The superlattice is grown epitaxially, and during the same growth process, a heavily selenium-doped semiconductor layer is also produced. The doped layer is then patterned through etching, followed by an annealing process that allows selenium impurities to diffuse into the superlattice, creating a non-disordered region that can function as a resonator in a laser.

Career Highlights

Kanamf Otaki is associated with Mitsubishi Electric Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also pushed the boundaries of what is possible in semiconductor device fabrication.

Collaborations

Throughout his career, Kanamf Otaki has collaborated with esteemed colleagues such as Takashi Murakami and Hisao Kumabe. These collaborations have fostered an environment of innovation and have led to further advancements in the field.

Conclusion

Kanamf Otaki's contributions to semiconductor technology exemplify the spirit of innovation. His patented method for producing semiconductor devices showcases his expertise and commitment to advancing the field. His work continues to influence the development of new technologies in the semiconductor industry.

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