Nagoya, Japan

Kana Ibata

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Ngk Insulators, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kana Ibata. Retrieved from https://idiyas.com/inventor/kana-ibata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Kana Ibata: Innovator in Composite Materials

Introduction

Kana Ibata is a notable inventor based in Nagoya, Japan. She has made significant contributions to the field of composite materials, particularly in the development of innovative manufacturing methods. Her work has implications for various industries, including semiconductor manufacturing.

Latest Patents

Kana Ibata holds a patent for a composite material sintered body, joined assembly, semiconductor manufacturing apparatus member, and composite material sintered body manufacturing method. This composite material sintered body includes silicon carbide, tungsten silicide, and tungsten carbide. It contains between 14.4 wt % and 48.6 wt % of silicon carbide and has an open porosity of 1% or less. This invention showcases her expertise in material science and engineering.

Career Highlights

Kana Ibata is currently employed at NGK Insulators, Inc., where she continues to innovate and develop new materials. Her work at the company has positioned her as a key player in advancing technology in the field of insulators and semiconductors.

Collaborations

Kana has collaborated with notable coworkers, including Asumi Nagai and Katsuhiro Inoue. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Kana Ibata's contributions to composite materials and her innovative patent demonstrate her significant role in advancing technology in her field. Her work continues to influence the semiconductor industry and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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