Company Filing History:
1 out of 836 
1 out of 1 Years Active: 1991-1992
Title: Kamesh V Gadepally: Innovator in Silicon Deposition Technology
Introduction
Kamesh V Gadepally is a notable inventor based in Little Rock, Arkansas. He has made significant contributions to the field of silicon deposition technology, holding 2 patents that showcase his innovative approaches. His work focuses on the development of novel methods for the deposition and film formation of silicon on various substrates.
Latest Patents
Gadepally's latest patents include an "Apparatus for the deposition and film formation of silicon on substrates." This innovative apparatus utilizes an aerosol generating technique, where silicon powder of optimum particle size is aerosolized, charged, and electrostatically deposited onto high melting point substrates. These substrates can include semiconducting, insulating, and conducting materials such as silicon, sapphire, and molybdenum. The coated substrates are then heat treated at optimal times and temperatures, resulting in the formation of polycrystalline silicon films. Another significant patent is the "Aerosol deposition and film formation of silicon," which describes a similar process for silicon deposition and film formation, emphasizing the efficiency and effectiveness of the aerosol technique.
Career Highlights
Throughout his career, Gadepally has worked with esteemed institutions such as the University of Arkansas and the Board of Trustees of the University of Little Rock. His experience in these organizations has allowed him to further his research and development in silicon technologies.
Collaborations
Gadepally has collaborated with various professionals in his field, including his coworker Roger M Hawk. These collaborations have contributed to the advancement of his innovative projects and patents.
Conclusion
Kamesh V Gadepally is a distinguished inventor whose work in silicon deposition technology has led to significant advancements in the field. His patents reflect his commitment to innovation and the development of efficient methods for silicon film formation.