The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1991
Filed:
Nov. 09, 1990
Applicant:
Inventors:
Roger M Hawk, Conway, AR (US);
Kamesh V Gadepally, Little Rock, AR (US);
Assignee:
The Board of Trustees of the University of Arkansas, Little Rock, AR (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437225 ; 437233 ; 437973 ; 437967 ; 427 13 ; 427 25 ;
Abstract
A novel method for the deposition of silicon and the formation of silicon films. More specifically, the process provides an aerosol generating technique, wherein silicon powder of optimum particle size is aerosolized, charged, and then electrostatically deposited onto high melting point substrates, which may include semiconducting, insulating, and conducting materials such as silicon, sapphire, and molybdenum, respectively. The powder coated substrates are subsequently heat treated at optimum times and temperatures, resulting in the formation of polycrystalline silicon films.