Company Filing History:
Years Active: 2015-2020
Title: Innovations of Kaixin Vivian Lin in Semiconductor Technology
Introduction
Kaixin Vivian Lin is a prominent inventor based in Singapore, known for her contributions to semiconductor technology. With a total of 4 patents, she has made significant strides in the development of high electron mobility transistors, which are crucial for high-power applications.
Latest Patents
Her latest patents include innovations in Group III nitride based high electron mobility transistors. One of her inventions provides a product and a manufacturing process for a high power semiconductor device. This device comprises a GaN/AlGaN epilayer structure on a silicon on insulator (SOI) substrate, featuring a thick, uninterrupted GaN layer designed for high-power applications. Another patent contemplates a semiconductor device that includes a substrate, a group (III)-nitride layer, a metal-group (III)-nitride layer deposited between the substrate and the group (III)-nitride layer, and a metal-nitride layer deposited between the substrate and the metal-group (III)-nitride layer. This innovative structure enhances the performance and efficiency of semiconductor devices.
Career Highlights
Kaixin Vivian Lin is currently associated with the Agency for Science, Technology and Research, where she continues to push the boundaries of semiconductor research. Her work has been instrumental in advancing the field and addressing the growing demands for high-performance electronic devices.
Collaborations
Throughout her career, Kaixin has collaborated with notable colleagues, including Krishna Kumar Manippady and Surani Bin Dolmanan, who have contributed to her research endeavors.
Conclusion
Kaixin Vivian Lin's innovative work in semiconductor technology exemplifies her commitment to advancing the field. Her patents reflect her expertise and dedication to developing high-performance devices that meet modern technological needs.