The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Dec. 03, 2019
Applicant:
Agency for Science, Technology and Research, Singapore, SG;
Inventors:
Krishna Kumar Manippady, Singapore, SG;
Surani Bin Dolmanan, Singapore, SG;
Kaixin Vivian Lin, Singapore, SG;
Hui Ru Tan, Singapore, SG;
Sudhiranjan Tripathy, Singapore, SG;
Assignee:
Agency for Science, Technology and Research, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); C30B 25/02 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 29/66462 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01);
Abstract
The invention provides a product and a manufacturing process for a high power semiconductor device. The semiconductor device comprises a GaN/AlGaN epilayer structure on an SOI substrate with a thick, uninterrupted GaN layer for use in high-power applications.