Company Filing History:
Years Active: 2020
Title: Innovations of Hui Ru Tan in Semiconductor Technology
Introduction
Hui Ru Tan is a prominent inventor based in Singapore, known for his contributions to semiconductor technology. He holds 2 patents that focus on high electron mobility transistors, which are crucial for high-power applications. His work has significantly advanced the field of electronics, particularly in the development of efficient semiconductor devices.
Latest Patents
Hui Ru Tan's latest patents include innovations in Group III nitride based high electron mobility transistors. The first patent provides a product and a manufacturing process for a high power semiconductor device. This device features a GaN/AlGaN epilayer structure on a silicon on insulator (SOI) substrate, incorporating a thick, uninterrupted GaN layer designed for high-power applications. The second patent contemplates a semiconductor device that includes a substrate, a group (III)-nitride layer, a metal-group (III)-nitride layer deposited between the substrate and the group (III)-nitride layer, and a metal-nitride layer deposited between the substrate and the metal-group (III)-nitride layer. This invention also outlines a method for creating a semiconductor device with the specified structure.
Career Highlights
Hui Ru Tan is affiliated with the Agency for Science, Technology and Research, where he has made significant strides in semiconductor research. His work has been instrumental in enhancing the performance and efficiency of electronic devices, making them more suitable for high-power applications.
Collaborations
Hui Ru Tan has collaborated with notable colleagues, including Krishna Kumar Manippady and Surani Bin Dolmanan. These collaborations have fostered a productive research environment, leading to innovative solutions in semiconductor technology.
Conclusion
Hui Ru Tan's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator. His work continues to influence the development of high-power electronic devices, showcasing the importance of innovation in advancing technology.