Kaiwei Li

Title: Innovations by Inventor Kaiwei Li

Introduction

Kaiwei Li is a notable inventor based in Hubei, China. He has made significant contributions to the field of power electronics, particularly in the estimation of junction temperatures in insulated gate bipolar transistor (IGBT) power modules. His innovative approach has implications for improving the efficiency and reliability of power electronic systems.

Latest Patents

Kaiwei Li holds a patent titled "Method for estimating junction temperature online on IGBT power module." This patent describes a method that estimates the junction temperature in real-time using the temperature sensitive electrical parameter method. The process involves setting a space thermal model of the extended state and applying the Kalman filter for accurate temperature estimation. The method utilizes the IGBT conduction voltage drop as a temperature sensitive electrical parameter and incorporates a Von-line measuring circuit. The power loss of the diode and IGBT, along with the estimated junction temperature, are inputs for the Kalman filter, which considers measurement noise and process noise to provide an optimal estimated value of junction temperature.

Career Highlights

Kaiwei Li is affiliated with Wuhan University, where he continues to engage in research and development in the field of power electronics. His work focuses on enhancing the performance and reliability of IGBT power modules, which are critical components in various electronic applications.

Collaborations

He collaborates with esteemed colleagues such as Yigang He and Weibo Yuan, contributing to advancements in their shared field of expertise.

Conclusion

Kaiwei Li's innovative methods for estimating junction temperatures in IGBT power modules represent a significant advancement in power electronics. His contributions are poised to enhance the efficiency and reliability of electronic systems, showcasing the importance of ongoing research and innovation in this field.