Company Filing History:
Years Active: 2013
Title: Innovations by Inventor Kai-Ying Wang
Introduction
Kai-Ying Wang is an inventor based in Kaohsiung City, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Schottky diodes. His innovative approach focuses on reducing the forward voltage drop in these devices, which is crucial for enhancing their efficiency and performance.
Latest Patent Applications
One of his notable patent applications is for a "Schottky Diode with Low Forward Voltage Drop." This invention features an N− type doped drift layer formed on an N+ type doped layer. The N− type doped drift layer includes a first surface with a protection ring that contains a P-type doped area. Additionally, the surface of the N− type doped drift layer is further enhanced with an oxide layer and a metal layer. The contact region between the metal layer and the N− type doped drift layer, along with the P-type doped area, forms a Schottky barrier. Importantly, the height of this Schottky barrier is lower than the surface of the N− type doped drift layer, which effectively reduces the thickness of the N− type doped drift layer beneath the Schottky barrier. This innovative configuration leads to a significant reduction in the forward voltage drop of the Schottky barrier.
Conclusion
Kai-Ying Wang's work in semiconductor technology, particularly with Schottky diodes, showcases his innovative spirit and dedication to improving electronic components. His contributions have the potential to enhance the efficiency of various electronic devices.