The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Jul. 20, 2011
Chiun-yen Tung, Kaohsiung, TW;
Kun-hsien Chen, Kaohsiung, TW;
Kai-ying Wang, Kaohsiung, TW;
Wen-li Tsai, Kaohsiung, TW;
Chiun-Yen Tung, Kaohsiung, TW;
Kun-Hsien Chen, Kaohsiung, TW;
Kai-Ying Wang, Kaohsiung, TW;
Wen-Li Tsai, Kaohsiung, TW;
Pynmax Technology Co., Ltd., Kaohsiung, TW;
Abstract
A Schottky diode with high antistatic capability has an N− type doped drift layer formed on an N+ type doped layer. The N− type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N− type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N− type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.