This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: National Central University. Active years: 2013.
Company Filing History:
Years Active: 2013
Title: Innovations of Kai-Lun Chi in Photodiode Technology.
Introduction
Kai-Lun Chi is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of photodiode technology, particularly with his innovative designs that enhance performance and efficiency. His work is recognized for addressing critical challenges in the industry.
Latest Patents
One of his key patents is the "Homojunction type high-speed photodiode." This invention features an active area of at least 50 microns, preferably greater than 60 microns in diameter. The design includes a p-i-n junction epitaxial layer formed on a semiconductor substrate, which consists of a first ohmic contact layer, an absorption layer, a collector layer, and a second ohmic contact layer. The invention effectively eliminates absorbance in the collector layer of InGaAs by utilizing an absorption layer with a powerful optical absorption constant. This advancement not only resolves issues related to surface absorbance but also enhances electron transport by employing InGaAs as the construction material. The resistance capacitance (RC) for the entire structure is significantly reduced, leading to improved bandwidth limitations caused by carrier transport time.
Career Highlights
Kai-Lun Chi is affiliated with National Central University, where he continues to contribute to research and development in semiconductor technologies. His work has garnered attention for its practical applications and innovative approaches to existing problems in photodiode design.
Collaborations
He collaborates with Jin-Wei Shi, who is also involved in similar research areas. Their partnership has led to advancements in the understanding and development of high-speed photodiodes.
Conclusion
Kai-Lun Chi's contributions to photodiode technology exemplify the impact of innovative thinking in the field of semiconductors. His patent on the homojunction type high-speed photodiode showcases his ability to solve complex problems and improve existing technologies.