Lincoln, NE, United States of America

Kai Jun Yi


Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):

Title: Innovations of Kai Jun Yi in Memory Technology.

Introduction

Kai Jun Yi is an accomplished inventor based in Lincoln, NE (US). He has made significant contributions to the field of memory technology, particularly with his innovative patent that enhances the capabilities of electrically writable and erasable memory mediums. His work is characterized by a focus on improving data recording elements through advanced structural designs.

Latest Patents

Kai Jun Yi holds a patent for an "Electrically writable and erasable memory medium having a data element with two or more multiple-layer structures made of individual layers." This patent describes a memory cell that includes a data recording element with multiple-layer structures stacked on top of each other. Each layer is designed to change phase between crystalline and amorphous states in response to electrical pulses. The unique design aims to reduce heat diffusion, thereby shortening the phase change time of the individual layers. This innovation represents a significant advancement in memory technology.

Career Highlights

Kai Jun Yi is associated with the Agency for Science, Technology and Research, where he has been instrumental in developing cutting-edge memory solutions. His expertise in the field has led to the creation of technologies that enhance data storage and retrieval processes.

Collaborations

He has collaborated with notable colleagues, including Tow Chong Chong and Lu Ping Shi, who contribute to the innovative environment at the Agency for Science, Technology and Research.

Conclusion

Kai Jun Yi's contributions to memory technology through his innovative patent demonstrate his commitment to advancing the field. His work not only enhances the efficiency of memory mediums but also paves the way for future developments in data storage technology.

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