Kai Jiun Chang

Title: Innovations of Kai Jiun Chang in Resistive Random Access Memory

Introduction

Kai Jiun Chang is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of memory technology, particularly through his work on resistive random access memory (RRAM). His innovative approach has the potential to enhance data storage solutions in various electronic devices.

Latest Patents

Chang holds a patent for a resistive random access memory and its manufacturing method. This patent describes a resistive random access memory that includes multiple unit structures disposed on a substrate. Each unit structure consists of a first electrode, a first metal oxide layer, and a spacer. The first electrode is positioned on the substrate, while the first metal oxide layer is placed on the first electrode. The spacer is located on the sidewalls of both the first electrode and the first metal oxide layer. Additionally, the RRAM features a second metal oxide layer and a second electrode, with the second metal oxide layer connected to the unit structures and the second electrode situated on top of the second metal oxide layer.

Career Highlights

Chang is currently employed at United Microelectronics Corporation, where he continues to develop cutting-edge technologies in the semiconductor industry. His work has been instrumental in advancing memory technology, making it more efficient and reliable.

Collaborations

Some of his notable coworkers include Chun-Hung Cheng and Chuan-Fu Wang. Their collaborative efforts contribute to the innovative environment at United Microelectronics Corporation.

Conclusion

Kai Jiun Chang's contributions to resistive random access memory technology exemplify his commitment to innovation in the field. His patent and ongoing work at United Microelectronics Corporation highlight the importance of advancements in memory solutions for the future of electronics.