Kai-Jhih Gan

Title: Innovations of Kai-Jhih Gan

Introduction

Kai-Jhih Gan is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work reflects a commitment to advancing technology and improving existing methods in the industry.

Latest Patents

One of Kai-Jhih Gan's key patents is titled "Method for manufacturing a conductive bridging memory device." This patent outlines a method that includes several steps. First, a bottom electrode is formed on a substrate. Next, a switching layer is created on the bottom electrode, made of a semiconducting metal oxide and free of gallium. The surface of the switching layer undergoes an oxygen plasma surface treatment. Following this, a blocking layer that includes a conductive material is formed on the treated surface of the switching layer, and finally, an upper electrode is established on the blocking layer. This innovative approach enhances the performance and reliability of memory devices.

Career Highlights

Kai-Jhih Gan is affiliated with National Yang Ming Chiao Tung University, where he contributes to research and development in the field of electronics. His academic background and professional experience have positioned him as a valuable asset in the realm of innovative technology.

Collaborations

Throughout his career, Kai-Jhih Gan has collaborated with esteemed colleagues, including Po-Tsun Liu and Chih-Chieh Hsu. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Kai-Jhih Gan's contributions to the field of memory devices through his innovative patent demonstrate his expertise and commitment to technological advancement. His work continues to influence the industry and inspire future innovations.