The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Sep. 01, 2021
Applicant:
National Yang Ming Chiao Tung University, Hsinchu, TW;
Inventors:
Assignee:
National Yang Ming Chiao Tung University, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2022.12); G11C 13/00 (2005.12); H10B 63/00 (2022.12);
U.S. Cl.
CPC ...
H10N 70/021 (2023.01); G11C 13/0011 (2012.12); H10B 63/80 (2023.01); H10N 70/841 (2023.01); H10N 70/883 (2023.01);
Abstract
A method for manufacturing a conductive bridging memory device includes the following steps. First, a bottom electrode is formed on a substrate. Next, a switching layer is formed on the bottom electrode. The switching layer is made of a semiconducting metal oxide and free of gallium. Then, a surface of the switching layer is subjected to an oxygen plasma surface treatment. Afterwards, a blocking layer including a conductive material is formed on the treated surface of the switching layer, and an upper electrode is formed on the blocking layer.