San Jose, CA, United States of America

Kadar Sapre


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Kadar Sapre: Innovator in Dielectric Gapfill Technology

Introduction

Kadar Sapre is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of dielectric materials.

Latest Patents

Kadar holds a patent for "Preferential Dielectric Gapfill." This patent focuses on methods for preferentially filling narrow trenches with silicon oxide while avoiding complete filling of wider trenches and open areas. The innovative approach involves depositing dielectric layers by introducing a silicon-containing precursor and ozone into a processing chamber. This results in a dense first portion of a silicon oxide layer, followed by a more porous second portion. The method ensures that narrow trenches are filled with dense material, while wider trenches can be effectively managed through wet etching.

Career Highlights

Kadar Sapre is currently employed at Applied Materials, Inc., a leading company in the semiconductor equipment industry. His work has been instrumental in advancing technologies that enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Kadar has collaborated with talented individuals such as Sasha Joseph Kweskin and Hiroshi Hamana, contributing to innovative projects within the semiconductor field.

Conclusion

Kadar Sapre's contributions to dielectric gapfill technology exemplify the innovative spirit of the semiconductor industry. His work continues to influence advancements in manufacturing processes, showcasing the importance of innovation in technology.

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