The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Mar. 21, 2011
Sasha Kweskin, St. Louis, MO (US);
Hiroshi Hamana, Hyogo, JP;
Paul Edward Gee, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Kadar Sapre, San Jose, CA (US);
Sasha Kweskin, St. Louis, MO (US);
Hiroshi Hamana, Hyogo, JP;
Paul Edward Gee, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Kadar Sapre, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.