Mountain View, CA, United States of America

Ka Ian Yung


 

Average Co-Inventor Count = 3.6

ph-index = 4

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 2008-2015

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6 patents (USPTO):Explore Patents

Title: Ka Ian Yung: Innovator in USB Technology

Introduction

Ka Ian Yung is a notable inventor based in Mountain View, CA (US). He has made significant contributions to the field of USB technology, holding a total of 6 patents. His innovative designs have paved the way for advancements in flash memory devices.

Latest Patents

One of his latest patents is for a low profile wire bonded USB device. This invention discloses a low profile USB flash memory device that includes an integrated circuit memory portion and a USB connector. The memory portion and the USB connector can be integrally formed on the same substrate. The device features a substrate on which one or more flash memory die, a controller die, passive components, and an LED for indicating memory access are mounted. Unlike prior art USB memory devices that utilized TSOP packages mounted on a printed circuit board, the semiconductor die in this invention are affixed to the substrate and wire bonded in a SIP configuration. This design omits the encapsulated TSOP packages, allowing for a reduction in the overall thickness of the USB flash memory device.

Career Highlights

Ka Ian Yung has worked with prominent companies in the technology sector, including SanDisk Technologies Inc. and SanDisk Corporation. His experience in these organizations has contributed to his expertise in developing innovative USB solutions.

Collaborations

Throughout his career, Ka Ian Yung has collaborated with talented individuals such as Steven Theodore Sprouse and Suresh Kumar Upadhyayula. These collaborations have further enhanced his work in the field of USB technology.

Conclusion

Ka Ian Yung is a distinguished inventor whose work in USB technology has led to significant advancements in the industry. His innovative designs and collaborations have made a lasting impact on the development of flash memory devices.

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