Jörg D Schmid

Title: Jörg D Schmid: Innovator in Memory Technology

Introduction

Jörg D Schmid is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of memory technology, particularly in the development of static random access memory (SRAM) cells. His innovative work has led to advancements that enhance device density and performance in memory applications.

Latest Patents

Jörg D Schmid holds a patent for an eight-transistor static random access memory cell. This invention discloses memory structure embodiments that include a memory cell, specifically an 8T SRAM cell characterized by high device density and symmetry. The design features an isolation region positioned laterally between two semiconductor bodies, with four gate structures traversing these bodies. The configuration includes four p-type transistors and four n-type transistors, which work together to optimize the functionality of the memory cell. Various interconnects, such as silicide bridges and contact straps, are utilized to ensure the operational integrity of the 8T SRAM cell within an array of such cells.

Career Highlights

Jörg D Schmid is currently employed at GlobalFoundries U.S. Inc., where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that meet the growing demands of modern electronics.

Collaborations

One of his notable collaborators is Nigel Chan, with whom he has worked closely on various projects related to memory technology.

Conclusion

Jörg D Schmid's contributions to the field of memory technology, particularly through his innovative 8T SRAM cell, highlight his role as a key inventor in this domain. His work at GlobalFoundries U.S. Inc. continues to influence advancements in memory applications.