This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Solid State Storage Technology Corporation. Active years: 2021.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2021
Title: Jyun-Gong Yu: Inventor in DRAM-Based Storage
Introduction
Jyun-Gong Yu is an inventor based in Taipei, Taiwan. His work includes a patent for a DRAM-based storage device and its associated data-processing method.
Latest Patents
Yu is associated with 1 patent, titled “DRAM-Based Storage Device and Associated Data Processing Method.” The invention describes a device with DRAM divided into a host-accessing area and a buffering area, alongside a control circuit. At predetermined intervals, the circuit copies a portion of data from the host-accessing area to the buffering area. Before copying, an error-correction-code (ECC) decoding operation detects and corrects errors in that portion. If the data is corrected, the circuit writes the corrected portion back to the host-accessing area.
Career Highlights
Yu is associated with Solid State Storage Technology Corporation. His patent focuses on data integrity in DRAM-based storage through periodic checking and correction of stored data.
Collaborations
Yu’s listed coworker is Yi-Chung Lee. Their shared professional context is associated with Solid State Storage Technology Corporation.
Conclusion
Jyun-Gong Yu’s patent describes a DRAM-based storage approach that uses ECC decoding and corrected-data rewriting to help maintain data integrity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile