Hsinchu, Taiwan

Jyi-Ren Deng

This inventor holds 1 USPTO granted patent. Top assignee: Industrial Technology Research Institute. Active years: 1994.


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: Jyi-Ren Deng: Innovator in Light Emitting Diode Technology

Introduction

Jyi-Ren Deng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light emitting diodes (LEDs). His innovative work has led to advancements that enhance the efficiency and performance of LED devices.

Latest Patents

Jyi-Ren Deng holds a patent for a light emitting diode that features a window layer made of ZnSSe semiconductor material with a second conductivity type. This design incorporates a low electrical resistivity, allowing it to function effectively as a current spreading layer. The window layer has a bandgap that is higher than that of the active layer, ensuring transparency to the emitted light. Additionally, the ZnSSe window layer can be doped with a donor concentration exceeding 1018 cm-3. The lattice constant of this layer is closely aligned with that of the active and confining layers, minimizing optical characteristic deterioration due to lattice mismatch.

Career Highlights

Jyi-Ren Deng is affiliated with the Industrial Technology Research Institute, where he continues to push the boundaries of semiconductor research. His work has been instrumental in advancing LED technology, which has widespread applications in various industries.

Collaborations

Some of his notable coworkers include Tzer-Perng Chen and Chin-Yuan Chen, who have collaborated with him on various projects related to semiconductor innovations.

Conclusion

Jyi-Ren Deng's contributions to light emitting diode technology exemplify the impact of innovative thinking in the field of semiconductors. His patent and ongoing research continue to influence advancements in this critical area of technology.

Profile summary based on public USPTO records.
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