Company Filing History:
Years Active: 1978-1979
Title: Jury V Sokurenko: Innovator in Semiconductor Technology
Introduction
Jury V Sokurenko is a prominent inventor based in Moscow, Russia. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative methods for fabricating semiconductor structures and pressure sensing devices.
Latest Patents
One of his latest patents is titled "Fabrication of a heterogeneous semiconductor structure with composition." This method involves producing a heterogeneous semiconductor structure with a composition gradient by transferring semiconductor material through the gaseous phase onto a substrate. The process utilizes a source comprising two components, AB and AC, arranged in parallel strips, each maintaining a constant ratio between the two components. The source is gradually brought under the substrate at a controlled speed, allowing for the formation of a main layer of the desired thickness.
Another notable patent is for a "Semiconductor structure sensitive to pressure." This invention describes a semiconductor pressure sensing device made from an AB.sub.1-x C.sub.x semiconductor structure. It consists of two semiconductor materials, AB and AC, and includes a means for measuring variations in electrical resistance in response to applied pressure. The structure features alternating layers with different values of x, enhancing its sensitivity to pressure changes.
Career Highlights
Throughout his career, Jury V Sokurenko has worked with various research institutions, including the State Scientific Research and Design Institute. His expertise in semiconductor technology has positioned him as a key figure in the field.
Collaborations
He has collaborated with notable professionals such as Vadim Nikolaevich Maslov and Oleg Evgenievich Korobov, contributing to advancements in semiconductor research and development.
Conclusion
Jury V Sokurenko's innovative work in semiconductor technology and his contributions through multiple patents highlight his importance in the field. His inventions continue to influence the development of advanced semiconductor structures and pressure sensing devices.